Silicon Carbide MOSFET Active Harmonic Filter SiC AHF

A SiC active harmonic filter replaces the conventional silicon IGBT bridge with silicon-carbide power devices. SiC switches faster with lower loss, so the filter achieves higher efficiency, higher power density and lower heat rejection while still cancelling harmonics in real time and holding THDi below 5%.

SiC MOSFETs tolerate higher switching frequencies (up to 40 kHz), which shrinks the magnetics, raises efficiency to 98% or more and reduces thermal loss by roughly a third — a smaller cabinet for the same capacity, less cooling and longer device life.

An external CT samples the load current; a DSP/FPGA runs an FFT to separate 2nd–51st order harmonics, reactive power and imbalance; the SiC bridge then injects an equal and opposite-phase compensation current so the utility sees only the fundamental.

208–690V, 3P3W/3P4W, 50A to 200A per module. Modules parallel without a practical limit to reach 3000 A and beyond for large plants.

Yes. A selectable priority function covers harmonic mitigation, reactive compensation and three-phase balancing. In 3P4W mode it also cancels the accumulated 3rd-harmonic neutral current.

Send us the load's harmonic spectrum, voltage class and installed nonlinear capacity. CHITEK supplies a selection matrix by voltage class, series and capacity, plus a sizing calculation on request.